1 infrared light emitting diodes ?.0 0.2 ?.8 0.2 2-0.8 max. 2-0.5 0.1 0.5 0.1 2.54 5.0 0.2 1.7 15.0 1.0 4.5 0.3 0.6 1.0 (1.5) 1 2 not soldered 2.0 max. 1: anode 2: cathode unit : mm infrared light emitting diodes LNA4801L gaalas infrared light emitting diode for optical control systems features fast response and high-speed modulation capability : f c = 20 mhz (typ.) wide directivity : q = 22 deg. (typ.) transparent epoxy resin package absolute maximum ratings (ta = 25?c) parameter symbol ratings unit power dissipation p d 190 mw forward current (dc) i f 100 ma pulse forward current i fp * 1a reverse voltage (dc) v r 3v operating ambient temperature t opr C25 to +85 ?c storage temperature t stg C30 to +100 ?c * f = 100hz, duty cycle = 0.1 % electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit center radiant intensity i e i f = 50ma 12 mw/sr peak emission wavelength l p i f = 50ma 860 nm spectral half band width dl i f = 50ma 40 nm forward voltage (dc) v f i f = 100ma 1.6 1.9 v reverse current (dc) i r v r = 3v 10 m a half-power angle q the angle in which radiant intencity is 50% 22 deg. cutoff frequency f c * i fp = 50ma + 10ma p-p 20 mhz * frequency when modulation optical power decreases by 3db from 1mhz ( 10 log p o (f c mhz) = C 3 ) p o (1mhz)
2 LNA4801L infrared light emitting diodes i f ?ta 120 100 80 60 40 20 ambient temperature ta (?c ) allowable forward current i f (ma) 0 20406080100 0 ?25 i fp ?duty cycle 10 2 10 1 10 ? duty cycle (%) pulse forward current i fp (a) 11010 2 10 ? 10 ? t w = 10 s ta = 25?c i fp ?v f 10 4 10 3 10 2 10 1 forward voltage v f (v) pulse forward current i fp (ma) 135 24 10 ? 0 t w = 10 s f = 100hz ta = 25?c d i e ?ta 10 1 ambient temperature ta (?c ) i f = 50ma relative radiant intensity d i e ?40 0 40 80 10 ? l p ?ta 920 900 880 860 840 820 ambient temperature ta (?c ) i f = 50ma peak emission wavelength l p (nm) ?40 0 40 80 120 spectral characteristics 100 80 60 40 20 wavelength l (nm) relative radiant intensity (%) 800 850 900 950 1000 1050 0 750 i f = 50ma ta = 25?c 2.2 1.8 1.4 1.0 0.6 v f ?ta ambient temperature ta (?c ) forward voltage v f (v) ?40 0 40 80 120 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? directivity characteristics d i e ?i fp 10 2 10 1 10 ? pulse forward current i fp (ma) relative radiant intensity i d e 10 2 10 10 ? 10 3 (1) t w = 10 s f = 100hz (2) dc ta = 25?c 1 20 90 100 80 70 60 50 40 30 relative radiant intensity (%) i f = 100ma 50ma (1) (2)
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